Engineering Conjugated Bridges in TPE-BT-Based Donor-Acceptor Molecules for Optimized Resistive Random Access Memory.

Journal: ACS applied materials & interfaces
Published Date: May 2, 2025

Abstract

Four donor-acceptor (D-A) type organic small molecules, namely, 4,7-bis(4-(1,2,2-triphenylvinyl)phenyl)benzo[][1,2,5]thiadiazole(TPE-BT), 4,7-bis((4-(1,2,2-triphenylvinyl)phenyl)ethynyl)benzo[][1,2,5]thiadiazole(TPE--BT), 4,7-bis(5-(4-(1,2,2-triphenylvinyl)phenyl)thiophen-2-yl)benzo[][1,2,5]thiadiazole (TPE--BT), and 4,7-bis((5-(4-(1,2,2-triphenylvinyl)phenyl)thiophen-2yl)ethynyl)benzo[][1,2,5]thiadiazole(TPE---BT), each incorporating unique conjugated bridges, are designed, synthesized, and integrated into resistive random access memory (RRAM) devices. Current-voltage () measurements indicate that the TPE-BT, TPE--BT and TPE--BT based devices exhibit write-once-read-many-times (WORM) characteristics, while TPEl-BT based devices show a stable flash-type switching behavior. In comparison to TPE-BT, the memory devices constructed with TPE--BT, TPE--BT and TPE---BT, which include additional conjugated bridges, exhibit nonvolatile memory capabilities with reduced threshold voltages, higher / (10:1), enhanced stability, and improved reproducibility. The photophysical, electrochemical analyses, and X-ray diffraction (XRD) results reveal that incorporating conjugated bridges within molecular structures can enhance data storage performance while reducing power consumption. Our findings demonstrate that these conjugated bridges play a crucial role in optimizing electrical memory characteristics and resistive switching behavior. Moreover, the device fabricated with TPE--BT is effectively applied to logic gate circuits and American Standard Code for Information Interchange (ASCII) art function, highlighting its promising potential as a smart sensor within artificial intelligence (AI) networks.

Authors

  • Xinwei Liu
    School of Mechanical & Electronic Engineering and Automation, Shanghai University, No.99 Shangda Road, Baoshan District, Shanghai 200444, China.
  • Hong Lian
    MOE Key Laboratory of Advanced Display and System Applications, Shanghai University, No.149 Yanchang Road, Jingan District, Shanghai 200072, China.
  • Liang Zhao
    Graduate School of Advanced Integrated Studies in Human Survivability (Shishu-Kan), Kyoto University, Kyoto, Japan.
  • Zhitao Qin
    MOE Key Laboratory of Advanced Display and System Applications, Shanghai University, No.149 Yanchang Road, Jingan District, Shanghai 200072, China.
  • Tianxiao Xiao
    Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Kowloon 999077, Hong Kong, China.
  • Xinyu Jiang
    Deutsches Elektronen-Synchrotron (DESY), Notkestraße 85, 22607 Hamburg, Germany.
  • Tianfu Guan
    Department of Physics, Chair for Functional Materials, TUM School of Natural Sciences, Technical University of Munich, James-Franck-Str. 1, 85748 Garching, Germany.
  • Shuanglong Wang
    Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Kowloon 999077, Hong Kong, China.
  • Peter Müller-Buschbaum
    Department of Physics, Chair for Functional Materials, TUM School of Natural Sciences, Technical University of Munich, James-Franck-Str. 1, 85748 Garching, Germany.
  • Qingchen Dong
    MOE Key Laboratory of Advanced Display and System Applications, Shanghai University, No.149 Yanchang Road, Jingan District, Shanghai 200072, China.

Keywords

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