Van der Waals Inverted-Floating-Gate Transistors for Artificial Intelligence Electronics.

Journal: ACS nano
Published Date:

Abstract

An inverted floating gate device architecture is introduced, demonstrated with all-van-der-Waals technology, targeting both logic and neuromorphic circuits. Integrating a top polymorphic multilayer graphene floating gate improves the electrostatic coupling to the ReS semiconductor channel by facilitating efficient dynamic conductance tuning and enabling dual-mode reconfigurable logic and memory operations. The non-volatile capability is used to implement compact logic gates for in-memory computing. The device is also shown to emulate synaptic plasticity, with an accuracy of 92% demonstrated in simple artificial neural network simulations. Moreover, spiking neuron circuits for neural networks through a five-transistor design makes it a versatile building block for artificial intelligence electronics. These findings demonstrate the potential of hybrid integration of van der Waals materials to address the limitations of traditional semiconductor technologies and become key to developments of next-generation electronics.

Authors

  • Mohamed Soliman
    Université de Strasbourg, IPCMS-CNRS UMR 7504, 23 Rue du Loess, Strasbourg 67034, France.
  • Cédric Marchand
    Centrale Lyon, INSA Lyon, CNRS, Université Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270, Ecully 69134, France.
  • Aymen Mahmoudi
    CNRS, Centre de Nanosciences et de Nanotechnologies, Université Paris-Saclay, Palaiseau 91120, France.
  • Neeraj Kumar Rajak
    Université de Strasbourg, IPCMS-CNRS UMR 7504, 23 Rue du Loess, Strasbourg 67034, France.
  • Takashi Taniguchi
    Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
  • Kenji Watanabe
    Department of Internal Medicine, Division of Inflammatory Bowel Disease, Hyogo College of Medicine, Hyogo, Japan.
  • Arnaud Gloppe
    Université de Strasbourg, IPCMS-CNRS UMR 7504, 23 Rue du Loess, Strasbourg 67034, France.
  • Bernard Doudin
    Université de Strasbourg, IPCMS-CNRS UMR 7504, 23 Rue du Loess, Strasbourg 67034, France.
  • Damien Deleruyelle
    INSA Lyon, Centrale Lyon, CNRS, Université Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270, Villeurbanne 69621, France.
  • Ian O'Connor
    Centrale Lyon, INSA Lyon, CNRS, Université Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270, Ecully 69134, France.
  • Abdelkarim Ouerghi
    CNRS, Centre de Nanosciences et de Nanotechnologies, Université Paris-Saclay, Palaiseau 91120, France.
  • Jean-Francois Dayen
    Université de Strasbourg, IPCMS-CNRS UMR 7504, 23 Rue du Loess, Strasbourg 67034, France.

Keywords

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