Advancements and challenges in inverse lithography technology: a review of artificial intelligence-based approaches.

Journal: Light, science & applications
Published Date:

Abstract

Inverse lithography technology (ILT) is a promising approach in computational lithography to address the challenges posed by shrinking semiconductor device dimensions. The ILT leverages optimization algorithms to generate mask patterns, outperforming traditional optical proximity correction methods. This review provides an overview of ILT's principles, evolution, and applications, with an emphasis on integration with artificial intelligence (AI) techniques. The review tracks recent advancements of ILT in model improvement and algorithmic efficiency. Challenges such as extended computational runtimes and mask-writing complexities are summarized, with potential solutions discussed. Despite these challenges, AI-driven methods, such as convolutional neural networks, deep neural networks, generative adversarial networks, and model-driven deep learning methods, are transforming ILT. AI-based approaches offer promising pathways to overcome existing limitations and support the adoption in high-volume manufacturing. Future research directions are explored to exploit ILT's potential and drive progress in the semiconductor industry.

Authors

  • Yixin Yang
    School of Electrical and Information Engineering, Anhui University of Technology, Maanshan, Anhui 243002, China.
  • Kexuan Liu
    Department of Anesthesiology, Nanfang Hospital, Southern Medical University, Guangzhou, China.
  • Yunhui Gao
    Department of Precision Instruments, Tsinghua University, Beijing, 100084, China.
  • Chen Wang
    Department of Cardiovascular Surgery, Union Hospital, Tongji Medical College, Huazhong University of Science and Technology, Wuhan, Hubei, China.
  • Liangcai Cao
    State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instruments, Tsinghua University, Beijing, 100084, China.

Keywords

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