Monolithically-Integrated van der Waals Synaptic Memory via Bulk Nano-Crystallization.

Journal: Advanced science (Weinheim, Baden-Wurttemberg, Germany)
Published Date: Aug 26, 2025

Abstract

Owing to the evolution of data-driven technologies, including the large language models, generative artificial intelligence, autonomous driving, and the internet of things requires advanced memory technology. However, conventional memory device structures and fabrication process have significant limitations for high-density integration. Herein, this study reports the monolithically-integrated 1-selector and 1-resistive (1S1R) synaptic memory in van der Waals (vdW) heterostructure, which overcomes the conventional limitations of device integration technologies. Single-step direct synthesis of vdW heterostructure and its corresponding 1S1R cell is fabricated via plasma-enhanced lattice-distortion. Scanning-transmission electron microscopy, and X-ray photoelectron spectroscopy are correlatively applied to observe the effects of plasma-enhanced nano-crystallization of bulk vdW VSe. Furthermore, bipolar resistive switching dynamics have been spatially resolved with conductive atomic force microscopy. Furthermore, the artificial vdW heterostructure exhibits the synaptic functionality with interfacial charge accumulation at the 2D/3D interface, enabling linear weight updates across multiple resistance states with minimal nonlinearity. In conclusion, it envision that the monolithically-integrated 1S1R cell can offers a systematic device platform for next-generation vdW electronics and its corresponding monolithic 3D integration.

Authors

  • Jinhyoung Lee
    School of Mechanical Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do, 16419, South Korea.
  • Gunhyoung Kim
    Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, 16419, South Korea.
  • Hyunho Seok
    Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
  • Sujeong Han
    Department of Artificial Intelligence, Chung-Ang University, Seoul, 06974, Republic of Korea.
  • Hyunwoo Shim
    Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, 16419, South Korea.
  • Yoonmi Cha
    Park Systems Corporation, 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16229, South Korea.
  • Sihoon Son
    SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea.
  • Hyunbin Choi
    Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, 16419, South Korea.
  • Magdalena Grzeszczyk
    Center for Quantum Nanoscience, Institute for Basic Science (IBS), Seoul, 03760, South Korea.
  • Aleksander Bogucki
    Center for Quantum Nanoscience, Institute for Basic Science (IBS), Seoul, 03760, South Korea.
  • Yunseok Choi
  • Seungil Kim
    Department of Mechanical Engineering and Materials Science and Institute of Materials Science and Engineering, Washington University in St. Louis, Missouri, MO, 63130, USA.
  • Hyeonjeong Lee
    Bio-Intelligence & Data Mining Laboratory, School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea.
  • Chaerin Park
    Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, 16419, South Korea.
  • Geonwook Kim
    School of Mechanical Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do, 16419, South Korea.
  • Hosin Hwang
    Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, 16419, South Korea.
  • Hyunho Kim
    School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Buk-gu, Gwangju, 61005, Republic of Korea.
  • Dongho Lee
    CALTH Inc., Changeop-ro 54, Seongnam, Gyeonggi, 13449, Republic of Korea.
  • Seowoo Son
    SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea.
  • Geumji Back
    Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, 16419, South Korea.
  • Hyelim Shin
    Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, 16419, South Korea.
  • Donghwan Choi
    Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, 16419, South Korea.
  • Alexina Ollier
    Center for Quantum Nanoscience, Institute for Basic Science (IBS), Seoul, 03760, South Korea.
  • Yeon-Ji Kim
    Korean Medicine-Application Center, Korea Institute of Oriental Medicine, Daegu 41062, Republic of Korea.
  • Lei Fang
    Nanomix, Inc, Emeryville, California (Fang, Yamaguchi).
  • Gyuho Han
    Park Systems Corporation, 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16229, South Korea.
  • Goo-Eun Jung
    Park Systems Corporation, 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16229, South Korea.
  • Youngi Lee
    Park Systems Corporation, 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16229, South Korea.
  • Hyeong-U Kim
    Semiconductor Manufacturing Research Center, Korea Institute of Machinery and Materials (KIMM), Daejeon, 34103, South Korea.
  • Kenji Watanabe
    Department of Internal Medicine, Division of Inflammatory Bowel Disease, Hyogo College of Medicine, Hyogo, Japan.
  • Takashi Taniguchi
    Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
  • Sanghoon Bae
    Department of Mechanical Engineering and Materials Science and Institute of Materials Science and Engineering, Washington University in St. Louis, Missouri, MO, 63130, USA.
  • Andreas Heinrich
    Department of Radiology, Jena University Hospital - Friedrich Schiller University, Jena, Germany.
  • Won-Jun Jang
    Center for Quantum Nanoscience, Institute for Basic Science (IBS), Seoul, 03760, South Korea.
  • Taesung Kim
    Graduate School of Artificial Intelligence, KAIST, Daehak-ro 291, Yuseong-gu, Daejeon, 34141, Korea.

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