Artificial Neuron Based on Electrical Anisotropy from WSe2 Field Effect Transistors.

Journal: Advanced science (Weinheim, Baden-Wurttemberg, Germany)
Published Date: Jan 20, 2026

Abstract

Neuromorphic systems have been recognized as potential computational platforms for overcoming the von Neumann architecture, where neurons are the basic units for neuromorphic computing. However, artificial neurons of two-dimensional materials suffered from limited stability and complex architecture. In this work, a multi-terminal neural device was constructed based on the electrical anisotropic properties of WSe2. Axon-multisynaptic performance with modulating plasticity was realized successfully by a stable six-terminal WSe2 field effect transistor. And dendritic functionality with optoelectronic synergy was obtained, showcasing the functional integrity of this neural device. Recognition accuracy of handwritten digits was obtained to 97% based on the synaptic weight of an artificial neuron. Additionally, gesture control of a robot manipulator was achieved with anisotropic synaptic responses from a WSe2 sample. These findings not only provide novel material platforms and circuit design solutions for constructing artificial neural networks but also mark a significant advancement in the development of neuromorphic electronics capable of processing complex signals.

Authors

  • Qi Sun
    Department of Orthopedics, Shanghai Tenth People's Hospital, Tongji University, School of Medicine, Shanghai, 200072, P.R.China.
  • Ping Chen
    Department of Infectious Diseases, Renmin Hospital of Wuhan University, Wuhan 430060, China.
  • Kun Lv
    Departments of1Radiology and.
  • Chuanwen Chen
    Center on Nanoenergy Research, Guangxi Key Laboratory For Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning, China.
  • Jinsheng Zhu
    Center on Nanoenergy Research, Guangxi Key Laboratory For Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning, China.
  • Zhiling Chen
    School of Physical Education, University of South China, Hengyang 421001, China.
  • Yaxian Lu
    Center on Nanoenergy Research, Guangxi Key Laboratory For Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning, China.
  • Ni Zhang
    Department of Throracic Surgery, Tongji Hospital, Tongji Medical College, Huazhong University of Science and Technology, 1095 Jiefang Avenue, Wuhan, Hubei 430030, China.
  • Zongqian Tan
    Center on Nanoenergy Research, Guangxi Key Laboratory For Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning, China.
  • Tao Lin
  • Caofeng Pan
    CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor , Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083 , P.R. China.

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