Ultralow-power consumption bimodal synaptic transistors for high-efficiency neuromorphic vision system.

Journal: Journal of colloid and interface science
Published Date:

Abstract

Artificial vision synaptic devices, characterized by low power consumption and high parallelism efficiency, hold significant promise for artificial visual systems. However, nearly all reported low-power consumption synaptic devices lack the capability for bimodal optoelectronic coordinated regulation. Furthermore, a prevalent but often overlooked issue in most electrically stimulated low-power consumption synaptic transistors is current backflow. This phenomenon leads to an underestimation of actual power consumption and obscures the true synaptic signal. Here, an ultralow-power consumption bimodal organic optoelectronic synaptic transistor is fabricated using a double insulating layer consisting of a proton-conductive material and a slow polarization material, as well as a p-type/n-type polymer blend. This study pioneers the systematic investigation of current backflow within low-power consumption synaptic transistors. Moreover, bimodal synaptic response is demonstrated with ultralow energy consumption, exhibiting a minimum energy expenditure of 8.3 and 2.2 fJ per synaptic event under electrical and optical stimulation, respectively. In addition, core functionalities of the visual system, including optoelectronic synaptic plasticity, image erasure/enhancement, real-time signal preprocessing, and dynamic information storage are successfully emulated. This work provides a viable approach for developing ultralow-power consumption bimodal optoelectronic synaptic transistors, supporting the advancement of energy-efficient neuromorphic devices and artificial intelligence systems.

Authors

  • Yijun Shi
    State Key Laboratory of Integrated Optoelectronics, Key Laboratory of UV-Emitting Materials and Technology Ministry of Education, School of Physics, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China.
  • Yanping Ni
    State Key Laboratory of Integrated Optoelectronics, Key Laboratory of UV-Emitting Materials and Technology Ministry of Education, School of Physics, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China.
  • Xiaoli Zhao
    College of Pharmacy, Nanjing University of Chinese Medicine, Nanjing, PR China. Electronic address: [email protected].
  • Hongyan Yu
    Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, Zhejiang, Province, China.
  • Jingchun Sun
    School of Biomedical Informatics, The University of Texas Health Science Center at Houston, Houston, TX, USA.
  • Peng Xue
    National Cancer Center/National Clinical Research Center for Cancer, Cancer Hospital, Chinese Academy of Medical Sciences and Peking Union Medical College, Beijing, China.
  • Juntong Li
    State Key Laboratory of Integrated Optoelectronics, Key Laboratory of UV-Emitting Materials and Technology Ministry of Education, School of Physics, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China.
  • Yutong Xie
  • Xiyu Zhang
    Department of Statistics and Medical Record Management, Provincial Hospital Affiliated to Shandong First Medical University, Jinan 250021, Shandong, China.
  • Jing Sun
    Department of Gastroenterology, Ruijin Hospital, Shanghai Jiao Tong University School of Medicine, Shanghai, China.
  • Junru Zhang
    Grado Department of Industrial and Systems Engineering, Virginia Tech, Blacksburg, VA, 24061, USA.
  • Cong Zhang
    School of Civil Engineering, Southeast University, Nanjing 210096, China.
  • Haiyang Xu
    Center for Advanced Optoelectronic Functional Materials Research, Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, China.
  • Yanhong Tong
    State Key Laboratory of Integrated Optoelectronics, Key Laboratory of UV-Emitting Materials and Technology Ministry of Education, School of Physics, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China.
  • Qingxin Tang
    State Key Laboratory of Integrated Optoelectronics, Key Laboratory of UV-Emitting Materials and Technology Ministry of Education, School of Physics, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China. Electronic address: [email protected].
  • Yichun Liu
    Center for Advanced Optoelectronic Functional Materials Research, Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, China.

Keywords

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