Domain-Wall-Mediated Interfacial Ferroelectric Switching.

Journal: Nano letters
Published Date: Jan 14, 2026

Abstract

Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of a domain wall (DW) in polarization switching, the coexistence of various DW types and their impact on polarization stability lack fundamental understanding. By integrating first-principles calculations, machine-learning methods, and experimental validations, we show that DWs connect opposite polarization states and respond to an out-of-plane electric field through polarization vector deviation, leading to inhomogeneous interlayer sliding and DW migration. This mechanism bears a clear resemblance to that in traditional ferroelectrics. Notably, different DW types result in distinct switching behaviors that play a crucial role in determining the reversibility of polarization switching. We then propose strategies beyond ideal conditions to achieve nonvolatile ferroelectric switching, which are supported by our experimental observations. These insights shed light on the microscopic switching mechanism in hexagonal interfacial ferroelectrics, offering guidance for future nanoelectronics applications.

Authors

  • Hao-Wen Xu
    Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, and Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai 200241, China.
  • Wen-Cheng Fan
    Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, and Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai 200241, China.
  • Jun-Ding Zheng
    Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, and Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai 200241, China.
  • Cheng-Shi Yao
    Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, and Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai 200241, China.
  • Ni Zhong
    Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China. [email protected].
  • Wen-Yi Tong
    Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, and Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai 200241, China.
  • Chun-Gang Duan
    Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China. [email protected].

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