Strain Relaxation in GaSb/GaAs(111)A Heteroepitaxy Using Thin InAs Interlayers.

Journal: ACS omega
Published Date: Nov 16, 2018

Abstract

We have systematically studied the strain relaxation processes in GaSb heteroepitaxy on GaAs(111)A using thin InAs interlayers. The growth with 1 ML- and 2 ML-InAs leads to formation of an InAsSb-like layer, which induces tensile strain in GaSb films, whereas the GaSb films grown with thicker InAs layers (≥3 ML) are under compressive strain. As the InAs thickness is increased above 5 ML, the insertion of the InAs layer becomes less effective in the strain relaxation, leaving residual strain in GaSb films. This leads to the elastic deformation of the GaSb lattice, giving rise to the increase in the peak width of X-ray rocking curves.

Authors

  • Akihiro Ohtake
    Research Center for Functional Materials, National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan.
  • Takaaki Mano
    Research Center for Functional Materials, National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan.
  • Kazutaka Mitsuishi
    Research Center for Advanced Measurement and Characterization, National Institute for Materials Science (NIMS), Tsukuba 305-0047, Japan.
  • Yoshiki Sakuma
    Research Center for Functional Materials, National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan.

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