3D Integrable W/SiN/n-Si/p-Si 1D1R Unipolar Resistive Random Access Memory Synapse for Suppressing Reverse Leakage in Spiking Neural Network.

Journal: Journal of nanoscience and nanotechnology
Published Date: Aug 1, 2020

Abstract

In this paper, we pose reverse leakage current issue which occurs when resistive random access memory (RRAM) is used as synapse for spiking neural networks (SNNs). To prevent this problem, 1 diode-1 RRAM (1D1R) synapse is suggested and simulated to examine their current rectifying chracteristics, Furthermore, high density of 1 K 3D 1D1R synapse array structure and its process flow are proposed.

Authors

  • Chae Soo Kim
    Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea.
  • Taehyung Kim
    Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea.
  • Kyung Kyu Min
    Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea.
  • Sungjun Kim
    Department of Radiology, Gangnam Severance Hospital, Yonsei University College of Medicine, Research Institute of Radiological Science, Center for Clinical Imaging Data Science, Seoul, South Korea. AGN70@yuhs.ac.
  • Byung-Gook Park
    Inter University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-744, Korea.

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