Reconfigurable MoS Memtransistors for Continuous Learning in Spiking Neural Networks.

Journal: Nano letters
Published Date:

Abstract

Artificial intelligence and machine learning are growing computing paradigms, but current algorithms incur undesirable energy costs on conventional hardware platforms, thus motivating the exploration of more efficient neuromorphic architectures. Toward this end, we introduce here a memtransistor with gate-tunable dynamic learning behavior. By fabricating memtransistors from monolayer MoS grown on sapphire, the relative importance of the vertical field effect from the gate is enhanced, thereby heightening reconfigurability of the device response. Inspired by biological systems, gate pulses are used to modulate potentiation and depression, resulting in diverse learning curves and simplified spike-timing-dependent plasticity that facilitate unsupervised learning in simulated spiking neural networks. This capability also enables continuous learning, which is a previously underexplored cognitive concept in neuromorphic computing. Overall, this work demonstrates that the reconfigurability of memtransistors provides unique hardware accelerator opportunities for energy efficient artificial intelligence and machine learning.

Authors

  • Jiangtan Yuan
    Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
  • Stephanie E Liu
    Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
  • Ahish Shylendra
    Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, Illinois 60607, United States.
  • William A Gaviria Rojas
    Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
  • Silu Guo
    Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
  • Hadallia Bergeron
    Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
  • Shaowei Li
    Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
  • Hong-Sub Lee
    Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
  • Shamma Nasrin
    Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, Illinois 60607, United States.
  • Vinod K Sangwan
    Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA.
  • Amit Ranjan Trivedi
    Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, Illinois 60607, United States.
  • Mark C Hersam
    Department of Materials Science and Engineering, Department of Chemistry, and Department of Electrical and Computer Engineering , Northwestern University , Evanston , Illinois 60208 , United States.