Self-rectifying-based memristors for neuromorphic computing.

Abstract

Authors

• Wen Huang
  New Energy Technology Engineering Laboratory of Jiangsu Province, School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China; State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.
• Pengjie Hang
  State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.
• Deren Yang
  State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.
• Xuegong Yu
  State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China. Electronic address: yuxuegong@zju.edu.cn.
• Xing'ao Li
  New Energy Technology Engineering Laboratory of Jiangsu Province, School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China; School of Science, Zhejiang University of Science & Technology, Hangzhou 310027, China. Electronic address: lixa@njupt.edu.cn.

Keywords

External Resources