Rational Design of Field-Effect Sensors Using Partial Differential Equations, Bayesian Inversion, and Artificial Neural Networks.
Journal:
Sensors (Basel, Switzerland)
Published Date:
Jun 24, 2022
Abstract
Silicon nanowire field-effect transistors are promising devices used to detect minute amounts of different biological species. We introduce the theoretical and computational aspects of forward and backward modeling of biosensitive sensors. Firstly, we introduce a forward system of partial differential equations to model the electrical behavior, and secondly, a backward Bayesian Markov-chain Monte-Carlo method is used to identify the unknown parameters such as the concentration of target molecules. Furthermore, we introduce a machine learning algorithm according to multilayer feed-forward neural networks. The trained model makes it possible to predict the sensor behavior based on the given parameters.