Transformer Based Binocular Disparity Prediction with Occlusion Predict and Novel Full Connection Layers.

Journal: Sensors (Basel, Switzerland)
PMID:

Abstract

The depth estimation algorithm based on the convolutional neural network has many limitations and defects by constructing matching cost volume to calculate the disparity: using a limited disparity range, the authentic disparity beyond the predetermined range can not be acquired; Besides, the matching process lacks constraints on occlusion and matching uniqueness; Also, as a local feature extractor, a convolutional neural network lacks the ability of global context information perception. Aiming at the problems in the matching method of constructing matching cost volume, we propose a disparity prediction algorithm based on Transformer, which specifically comprises the Swin-SPP module for feature extraction based on Swin Transformer, Transformer disparity matching network based on self-attention and cross-attention mechanism, and occlusion prediction sub-network. In addition, we propose a double skip connection fully connected layer to solve the problems of gradient vanishing and explosion during the training process for the Transformer model, thus further enhancing inference accuracy. The proposed model in this paper achieved an EPE (Absolute error) of 0.57 and 0.61, and a 3PE (Percentage error greater than 3 px) of 1.74% and 1.56% on KITTI 2012 and KITTI 2015 datasets, respectively, with an inference time of 0.46 s and parameters as low as only 2.6 M, showing great advantages compared with other algorithms in various evaluation metrics.

Authors

  • Yi Liu
    Department of Interventional Therapy, Ningbo No. 2 Hospital, Ningbo, China.
  • Xintao Xu
    School of Microelectronics, University of Science and Technology of China, Hefei, China.
  • Bajian Xiang
    Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
  • Gang Chen
    Department of Orthopedics, West China Hospital, Sichuan University, Chengdu, Sichuan, China.
  • Guoliang Gong
    Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
  • Huaxiang Lu
    Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.