Single-Transistor Neuron with Excitatory-Inhibitory Spatiotemporal Dynamics Applied for Neuronal Oscillations.

Journal: Advanced materials (Deerfield Beach, Fla.)
Published Date:

Abstract

Brain-inspired neuromorphic computing systems with the potential to drive the next wave of artificial intelligence demand a spectrum of critical components beyond simple characteristics. An emerging research trend is to achieve advanced functions with ultracompact neuromorphic devices. In this work, a single-transistor neuron is demonstrated that implements excitatory-inhibitory (E-I) spatiotemporal integration and a series of essential neuron behaviors. Neuronal oscillations, the fundamental mode of neuronal communication, that construct high-dimensional population code to achieve efficient computing in the brain, can also be demonstrated by the neuron transistors. The highly scalable E-I neuron can be the basic building block for implementing core neuronal circuit motifs and large-scale architectural plans to replicate energy-efficient neural computations, forming the foundation of future integrated neuromorphic systems.

Authors

  • Hanxi Li
    School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 310027, China.
  • Jiayang Hu
    School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 310027, China.
  • Anzhe Chen
    School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 310027, China.
  • Chenhao Wang
    Department of Computer Science, University of Copenhagen, 2100, København Ø, Denmark.
  • Li Chen
    Department of Endocrinology and Metabolism, Qilu Hospital, Shandong University, Jinan, China.
  • Feng Tian
    Bioinformatics Graduate Program, and Department of Biomedical Engineering, Boston. University, 24 Cummington Mall, Boston, MA 02215, USA.
  • Jiachao Zhou
    School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 310027, China.
  • Yuda Zhao
    School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 310027, China.
  • Jinrui Chen
    Cambridge Graphene Centre, Cambridge University Engineering Department, Cambridge, CB3 0FA, UK.
  • Yi Tong
    Engineering Product Development Singapore University of Technology and Design 8 Somapah Road, Singapore 487372.
  • Kian Ping Loh
    Department of Chemistry, National University of Singapore, Singapore, 119077, Singapore.
  • Yang Xu
    Dermatological Department, Nan Chong Center Hospital, Nanchong, China.
  • Yishu Zhang
    Engineering Product Development, Singapore University of Technology and Design (SUTD), 8 Somapah Road, 487372, Singapore.
  • Tawfique Hasan
    Cambridge Graphene Centre, Cambridge University Engineering Department, Cambridge, CB3 0FA, UK.
  • Bin Yu
    Department of Anesthesiology, Peking University First Hospital, Ningxia Women's and Children's Hospital, Yinchuan, China.