Multifunctional Optoelectronic Synapses Based on Arrayed MoS Monolayers Emulating Human Association Memory.

Journal: Advanced science (Weinheim, Baden-Wurttemberg, Germany)
PMID: 37058134

Abstract

Optoelectronic synaptic devices integrating light-perception and signal-storage functions hold great potential in neuromorphic computing for visual information processing, as well as complex brain-like learning, memorizing, and reasoning. Herein, the successful growth of MoS monolayer arrays assisted by gold nanorods guided precursor nucleation is demonstrated. Optical, spectral, and morphology characterizations of MoS prove that arrayed flakes are homogeneous monolayers, and they are further fabricated as optoelectronic devices showing featured photocurrent loops and stable optical responses. Typical synaptic behaviors of photo-induced short-term potentiation, long-term potentiation, and paired pulse facilitation are recorded under different light stimulations of 450, 532, and 633 nm lasers at various excitation powers. A visual sensing system consisting of 5 × 6 pixels is constructed to simulate the light-sensing image mapped by forgetting curves in real time. Moreover, the system presents the ability of utilizing associated images to restore vague and incomplete memories, which successfully mimics human intelligent behaviors of association memory and logical reasoning. The work emulates the brain-like artificial intelligence using arrayed 2D semiconductors, which paves an avenue to achieve smart retina and complex brain-like system.

Authors

  • Ming Huang
    College of Food Science and Technology, Nanjing Agricultural University, Nanjing 210095, China.
  • Wajid Ali
    Department of Applied Mathematics, Chung Yuan Christian University, Chung-Li 32023, Taiwan.
  • Liuli Yang
    Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China.
  • Jianhua Huang
    Hunan University of Traditional Chinese Medicine College of Pharmacy, Changsha 410028, China.
  • Chengdong Yao
    Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China.
  • Yunfei Xie
    Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China.
  • Ronghuan Sun
    Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China.
  • Chenguang Zhu
    Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China.
  • Yike Tan
    Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China.
  • Xiao Liu
  • Shengman Li
    Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China.
  • Ziwei Li
    Faculty of Environment and Life Sciences, Beijing University of Technology, Beijing 100124, China.
  • Anlian Pan
    Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China.

Keywords

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