Optoelectronic neuron based on transistor combined with volatile threshold switching memristors for neuromorphic computing.

Journal: Journal of colloid and interface science
Published Date:

Abstract

The human perception and learning heavily rely on the visual system, where the retina plays a vital role in preprocessing visual information. Developing neuromorphic vision hardware is based on imitating the neurobiological functions of the retina. In this work, an optoelectronic neuron is developed by combining a gate-modulated PDVT-10 channel with a volatile threshold switching memristor, enabling the achievement of optoelectronic performance through a resistance-matching mechanism. The optoelectronic spiking neuron exhibits the ability to alter its spiking behavior in a manner resembling that of a retina. Incorporating electrical and optical modulation, the artificial neuron accurately replicates neuronal signal transmission in a biologically manner. Moreover, it demonstrates inhibition of neuronal firing during darkness and activation upon exposure to light. Finally, the evaluation of a perceptron spiking neural network utilizing these leaky integrate-and-fire neurons is conducted through simulation to assess its capability in classifying image recognition algorithms. This research offers a hopeful direction for the development of easily expandable and hierarchically structured spiking electronics, broadening the range of potential applications in biomimetic vision within the emerging field of neuromorphic hardware.

Authors

  • Yanmei Sun
    Key Laboratory of Resources Biology and Biotechnology in Western China, Ministry of Education, Provincial Key Laboratory of Biotechnology of Shaanxi Province, College of Life Sciences, Northwest University, Xi'an 710069, China.
  • Xinru Meng
    School of Electronic Engineering, Heilongjiang University, Harbin 150080, China; Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China.
  • Gexun Qin
    School of Electronic Engineering, Heilongjiang University, Harbin 150080, China; Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China.