Spiking Neural Networks with Unsupervised Learning Based on STDP Using Resistive Synaptic Devices and Analog CMOS Neuron Circuit.

Journal: Journal of nanoscience and nanotechnology
Published Date:

Abstract

We designed the CMOS analog integrate and fire (I&F) neuron circuit can drive resistive synaptic device. The neuron circuit consists of a current mirror for spatial integration, a capacitor for temporal integration, asymmetric negative and positive pulse generation part, a refractory part, and finally a back-propagation pulse generation part for learning of the synaptic devices. The resistive synaptic devices were fabricated using HfOx switching layer by atomic layer deposition (ALD). The resistive synaptic device had gradual set and reset characteristics and the conductance was adjusted by spike-timing-dependent-plasticity (STDP) learning rule. We carried out circuit simulation of synaptic device and CMOS neuron circuit. And we have developed an unsupervised spiking neural networks (SNNs) for 5 × 5 pattern recognition and classification using the neuron circuit and synaptic devices. The hardware-based SNNs can autonomously and efficiently control the weight updates of the synapses between neurons, without the aid of software calculations.

Authors

  • Min-Woo Kwon
    Inter University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-744, Korea.
  • Myung-Hyun Baek
    Inter University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-744, Korea.
  • Sungmin Hwang
    Inter University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-744, Korea.
  • Sungjun Kim
    Department of Radiology, Gangnam Severance Hospital, Yonsei University College of Medicine, Research Institute of Radiological Science, Center for Clinical Imaging Data Science, Seoul, South Korea. AGN70@yuhs.ac.
  • Byung-Gook Park
    Inter University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-744, Korea.