An Oxide Schottky Junction Artificial Optoelectronic Synapse.

Journal: ACS nano
Published Date: Feb 12, 2019

Abstract

The rapid development of artificial intelligence techniques and future advanced robot systems sparks emergent demand on the accurate perception and understanding of the external environments via visual sensing systems that can co-locate the self-adaptive detecting, processing, and memorizing of optical signals. In this contribution, a simple indium-tin oxide/Nb-doped SrTiO (ITO/Nb:SrTiO) heterojunction artificial optoelectronic synapse is proposed and demonstrated. Through the light and electric field co-modulation of the Schottky barrier profile at the ITO/Nb:SrTiO interface, the oxide heterojunction device can respond to the entire visible light region in a neuromorphic manner, allowing synaptic paired-pulse facilitation, short/long-term memory, and "learning-experience" behavior for optical information manipulation. More importantly, the photoplasticity of the artificial synapse has been modulated by heterosynaptic means with a sub-1 V external voltage, not only enabling an optoelectronic analog of the mechanical aperture device showing adaptive and stable optical perception capability under different illuminating conditions but also making the artificial synapse suitable for the mimicry of interest-modulated human visual memories.

Authors

  • Shuang Gao
    School of Pharmacy, Shenyang Pharmaceutical University, Shenyang 110016, China.
  • Gang Liu
    Department of Interventional Radiology, Qinghai Red Cross Hospital, Xining, Qinghai, China.
  • Huali Yang
    CAS Key Laboratory of Magnetic Materials and Devices , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China.
  • Chao Hu
    CAS Key Laboratory of Magnetic Materials and Devices , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China.
  • Qilai Chen
    CAS Key Laboratory of Magnetic Materials and Devices , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China.
  • Guodong Gong
    CAS Key Laboratory of Magnetic Materials and Devices , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China.
  • Wuhong Xue
    CAS Key Laboratory of Magnetic Materials and Devices , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China.
  • Xiaohui Yi
    CAS Key Laboratory of Magnetic Materials and Devices , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China.
  • Jie Shang
    CAS Key Laboratory of Magnetic Materials and Devices , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China.
  • Run-Wei Li
    CAS Key Laboratory of Magnetic Materials and Devices , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China.

Keywords

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