Artificial Adaptive and Maladaptive Sensory Receptors Based on a Surface-Dominated Diffusive Memristor.

Journal: Advanced science (Weinheim, Baden-Wurttemberg, Germany)
PMID:

Abstract

A biological receptor serves as sensory transduction from an external stimulus to an electrical signal. It allows humans to better match the environment by filtering out repetitive innocuous information and recognize potentially damaging stimuli through key features, including adaptive and maladaptive behaviors. Herein, for the first time, the authors develop substantial artificial receptors involving both adaptive and maladaptive behaviors using diffusive memristor. Metal-oxide nanorods (NR) as a switching matrix enable the electromigration of an active metal along the surface of the NRs under electrical stimulation, resulting in unique surface-dominated switching dynamics with the advantage of fast Ag migration and fine controllability of the conductive filament. To experimentally demonstrate its potential application, a thermoreceptor system is constructed using memristive artificial receptors. The proposed surface-dominated diffusive memristor allows the direct emulation of the biological receptors, which represents an advance in the bioinspired technology adopted in creating artificial intelligence systems.

Authors

  • Young Geun Song
    Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02791, Republic of Korea.
  • Jun Min Suh
    Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea.
  • Jae Yeol Park
    Department of Materials Science & Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea.
  • Ji Eun Kim
    Department of Biomaterials Science, College of Natural Resources & Life Science/Life and Industry Convergence Research Institute, Pusan National University, Miryang 627-706, Republic of Korea.
  • Suk Yeop Chun
    Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02791, Republic of Korea.
  • Jae Uk Kwon
    Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02791, Republic of Korea.
  • Ho Lee
    Department of Nuclear Engineering, Hanyang University, Seoul, 02841, Republic of Korea.
  • Ho Won Jang
    Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea.
  • Sangtae Kim
    Department of Nuclear Engineering, Hanyang University, Seoul, 02841, Republic of Korea.
  • Chong-Yun Kang
    Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02791, Republic of Korea.
  • Jung Ho Yoon
    Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, 01003, USA.