Versatile memristor for memory and neuromorphic computing.

Journal: Nanoscale horizons
Published Date: Feb 28, 2022

Abstract

The memristor is a promising candidate to implement high-density memory and neuromorphic computing. Based on the characteristic retention time, memristors are classified into volatile and non-volatile types. However, a single memristor generally provides a specific function based on electronic performances, which poses roadblocks for further developing novel circuits. Versatile memristors exhibiting both volatile and non-volatile properties can provide multiple functions covering non-volatile memory and neuromorphic computing. In this work, a versatile memristor with volatile/non-volatile bifunctional properties was developed. Non-volatile functionality with a storage window of 4.0 × 10 was obtained. Meanwhile, the device can provide threshold volatile functionalities with a storage window of 7.0 × 10 and a rectification ratio of 4.0 × 10. The leaky integrate-and-fire (LIF) neuron model and artificial synapse based on the device have been studied. Such a versatile memristor enables non-volatile memory, selectors, artificial neurons, and artificial synapses, which will provide advantages regarding circuit simplification, fabrication processes, and manufacturing costs.

Authors

  • Tao Guo
    Key Laboratory of Digital Technology in Medical Diagnostics of Zhejiang Province, Hangzhou, Zhejiang, China.
  • Kangqiang Pan
    Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada.
  • Yixuan Jiao
    Department of Mechanical and Mechatronics Engineering, Waterloo Institute of Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada. nzhou@uwaterloo.ca.
  • Bai Sun
    Department of Mechanical and Mechatronics Engineering, Waterloo Institute for Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada.
  • Cheng Du
    Department of Mechanical and Mechatronics Engineering, Waterloo Institute of Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada. nzhou@uwaterloo.ca.
  • Joel P Mills
    Department of Mechanical and Mechatronics Engineering, Waterloo Institute of Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada. nzhou@uwaterloo.ca.
  • Zuolong Chen
    Department of Mechanical and Mechatronics Engineering, Waterloo Institute of Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada. nzhou@uwaterloo.ca.
  • Xiaoye Zhao
    Department of Mechanical and Mechatronics Engineering, Waterloo Institute of Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada. nzhou@uwaterloo.ca.
  • Lan Wei
    Information Center, Xuanwu Hospital, Capital Medical University, No. 45 Changchun Street, Xicheng District, Beijing, 100053, People's Republic of China.
  • Y Norman Zhou
    Department of Mechanical and Mechatronics Engineering, Waterloo Institute for Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada.
  • Yimin A Wu
    Department of Mechanical and Mechatronics Engineering, Waterloo Institute for Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada.

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