Compact artificial neuron based on anti-ferroelectric transistor.

Journal: Nature communications
Published Date: Nov 17, 2022

Abstract

Neuromorphic machines are intriguing for building energy-efficient intelligent systems, where spiking neurons are pivotal components. Recently, memristive neurons with promising bio-plausibility have been developed, but with limited reliability, bulky capacitors or additional reset circuits. Here, we propose an anti-ferroelectric field-effect transistor neuron based on the inherent polarization and depolarization of HfZrO anti-ferroelectric film to meet these challenges. The intrinsic accumulated polarization/spontaneous depolarization of HfZrO films implements the integration/leaky behavior of neurons, avoiding external capacitors and reset circuits. Moreover, the anti-ferroelectric neuron exhibits low energy consumption (37 fJ/spike), high endurance (>10), high uniformity and high stability. We further construct a two-layer fully ferroelectric spiking neural networks that combines anti-ferroelectric neurons and ferroelectric synapses, achieving 96.8% recognition accuracy on the Modified National Institute of Standards and Technology dataset. This work opens the way to emulate neurons with anti-ferroelectric materials and provides a promising approach to building high-efficient neuromorphic hardware.

Authors

  • Rongrong Cao
    College of Electronic Science and Technology, National University of Defense Technology, 410073, Changsha, China.
  • Xumeng Zhang
    Department of Electrical and Computer Engineering, University of Massachusetts, 100 Natural Resources Road, Amherst, Massachusetts, 01003, USA.
  • Sen Liu
    Automotive Data Center, China Automotive Technology & Research, Tianjin, 300300, China.
  • Jikai Lu
    Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
  • Yongzhou Wang
    Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, China.
  • Hao Jiang
    Drug Discovery and Design Center, State Key Laboratory of Drug Research, Shanghai Institute of Materia Medica, Chinese Academy of Sciences , 555 Zuchongzhi Road, Shanghai 201203, China.
  • Yang Yang
    Department of Gastrointestinal Surgery, The Third Hospital of Hebei Medical University, Shijiazhuang, China.
  • Yize Sun
    Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics, Chinese Academy of Sciences, No. 3 Beitucheng West Road, Chaoyang District, 100029, Beijing, China.
  • Wei Wei
    Dept. Biomedical Informatics, University of Pittsburgh, Pittsburgh, PA, USA.
  • Jianlu Wang
    Frontier Institute of Chip and System, Fudan University, No. 2005 Songhu Road, Yangpu District, 200438, Shanghai, China.
  • Hui Xu
    No 202 Hospital of People's Liberation Army, Liaoning 110003, China.
  • Qingjiang Li
    College of Electronic Science and Technology, National University of Defense Technology, 410073, Changsha, China. qingjiangli@nudt.edu.cn.
  • Qi Liu
    National Institute of Traditional Chinese Medicine Constitution and Preventive Medicine, Beijing University of Chinese Medicine, Beijing, China.

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