High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction.

Journal: Proceedings of the National Academy of Sciences of the United States of America
PMID: 36630451

Abstract

Cost-effective fabrication of mechanically flexible low-power electronics is important for emerging applications including wearable electronics, artificial intelligence, and the Internet of Things. Here, solution-processed source-gated transistors (SGTs) with an unprecedented intrinsic gain of ~2,000, low saturation voltage of +0.8 ± 0.1 V, and a ~25.6 μW power consumption are realized using an indium oxide InO/InO:polyethylenimine (PEI) blend homojunction with Au contacts on Si/SiO. Kelvin probe force microscopy confirms source-controlled operation of the SGT and reveals that PEI doping leads to more effective depletion of the reverse-biased Schottky contact source region. Furthermore, using a fluoride-doped AlO gate dielectric, rigid (on a Si substrate) and flexible (on a polyimide substrate) SGTs were fabricated. These devices exhibit a low driving voltage of +2 V and power consumption of ~11.5 μW, yielding inverters with an outstanding voltage gain of >5,000. Furthermore, electrooculographic (EOG) signal monitoring can now be demonstrated using an SGT inverter, where a ~1.0 mV EOG signal is amplified to over 300 mV, indicating significant potential for applications in wearable medical sensing and human-computer interfacing.

Authors

  • Xinming Zhuang
    School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China.
  • Joon-Seok Kim
    Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208.
  • Wei Huang
    Shaanxi Institute of Flexible Electronics, Northwestern Polytechnical University, 710072 Xi'an, China.
  • Yao Chen
    Department of Galactophore Surgery, West China Hospital, Sichuan University, Chengdu, 610041, PR China.
  • Gang Wang
    National Clinical Research Center for Mental Disorders & Beijing Key Laboratory of Mental Disorders, Beijing Anding Hospital, Capital Medical University, Beijing, China.
  • Jianhua Chen
    Department of Electronic Engineering, Information School, Yunnan University, Kunming, Yunnan 650091, China.
  • Yao Yao
    Key Laboratory for Organic Electronics and Information Displays (KLOEID) & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing 210023, China.
  • Zhi Wang
    Department of Pharmacy, The Second Affiliated Hospital of Nanjing Medical University, Nanjing, China.
  • Fengjing Liu
    School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China.
  • Junsheng Yu
    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Technology, University of Electronic Science and Technology of China, Chengdu 610054, China.
  • Yuhua Cheng
    School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu, Sichuan 611731, China.
  • Zaixing Yang
    School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China.
  • Lincoln J Lauhon
    Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208.
  • Tobin J Marks
    Department of Chemistry, Northwestern University, Evanston, IL 60208.
  • Antonio Facchetti
    Department of Chemistry, Northwestern University, Evanston, IL 60208.

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