An all-two-dimensional Fe-FET retinomorphic sensor based on the novel gate dielectric InSeO.

Journal: Nanoscale
PMID: 37318047

Abstract

Two-dimensional (2D) ferroelectric field-effect transistors (Fe-FETs) have attracted extensive interest as a competitive platform for implementing future-generation functional electronics, including digital memory and brain-inspired computing circuits. In 2D Fe-FETs, the 2D ferroelectric materials are more suitable as gate dielectric materials compared to 3D ferroelectric materials. However, the current 2D ferroelectric materials (represented by α-InSe) need to be integrated with other 3D gate dielectric layers because of their high conductivity as a ferroelectric semiconductor. This 2D/3D hybrid structure can lead to compatibility problems in practical devices. In this study, a new 2D gate dielectric material that is compatible with the complementary metal-oxide semiconductor process was found by using oxygen plasma treatment. The 2D gate dielectric material obtained shows excellent performance, with an equivalent oxide thickness of less than 0.15 nm, and excellent insulation, with a leakage current of less than 2 × 10 A cm (under a 1 V gate voltage). Based on this dielectric layer and the α-InSe ferroelectric gate material, we fabricated an all-2D Fe-FET high-performance photodetector with a high on/off ratio (∼10) and detectivity (>10 Jones). Moreover, the photoelectric device integrates perception, memory and computing characteristics, indicating that it can be applied to an artificial neural network for visual recognition.

Authors

  • Xuhong Li
    School of Physics, Beihang University, Beijing 100191, China. fmliu@buaa.edu.cn.
  • Xiaoqing Chen
    College of Chemistry and Chemical Engineering, Central South University, Changsha 410083, China.
  • Wenjie Deng
    Key Laboratory of Optoelectronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing 100124, China. chenxiaoqing@bjut.edu.cn.
  • Songyu Li
    School of Physics, Beihang University, Beijing 100191, China. fmliu@buaa.edu.cn.
  • Boxing An
    Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China.
  • Feihong Chu
    Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China.
  • Yi Wu
    School of International Communication and Arts, Hainan University, Haikou, China.
  • Famin Liu
    School of Physics, Beihang University, Beijing 100191, China. fmliu@buaa.edu.cn.
  • Yongzhe Zhang
    Key Laboratory of Optoelectronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing 100124, China. chenxiaoqing@bjut.edu.cn.

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